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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6268-B Issued Date : 1993.10.05 Revised Date : 2000.09.25 Page No. : 1/4
H2N6517
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6517 is designed for general purpose applications requiring high breakdown voltages.
Features
* High Collector-Emitter Breakdown Voltage * Low Collector-Emitter Saturation Voltage * The H2N6517 is complementary to H2N6520
Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature ....................................................................................................... -55 ~ +150 C Junction Temperature ............................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C)............................................................................................ 625 mW * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage................................................................................................... 350 V VCEO Collector to Emitter Voltage................................................................................................ 350 V VEBO Emitter to Base Voltage.......................................................................................................... 5 V IC Collector Current .................................................................................................................. 500 mA IB Base Current ........................................................................................................................ 250 mA
Characteristics (Ta=25C, *Pulse Test : Pulse Width 380us, Duty Cycle2%)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 VBE(on) *VBE(sat)1 *VBE(sat)2 *VBE(sat)3 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob Min. 350 350 5 20 30 30 20 15 40 Typ. Max. 50 50 0.30 0.35 0.50 1 2 0.75 0.85 0.90 200 200 200 6 Unit V V V nA nA V V V V V V V V Test Conditions IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=250V, IE=0 VEB=5V, IC=0 IC=10mA, IB=1mA IC=20mA, IB=2mA IC=30mA, IB=3mA IC=50mA, IB=5mA IC=100mA, VCE=10V IC=10mA, IB=1mA IC=20mA, IB=2mA IC=30mA, IB=3mA VCE=10V, IC=1mA VCE=10V, IC=10m VCE=10V, IC=30mA VCE=10V, IC=50mA VCE=10V, IC=100mA IC=10mA, VCE=20V, f=20MHz VCB=20V, f=1MHz, IE=0
HSMC Product Specification
MHz pF
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000 100000
Spec. No. : HE6268-B Issued Date : 1993.10.05 Revised Date : 2000.09.25 Page No. : 2/4
Saturation Voltage & Collector Current
100
hFE@VC E = 10
Saturation Voltage (mV)
10000
hFE
1000 VBE(sat) @ IC=10IB 100 VCE(sat) @ IC=10IB
10
1 0.1 1 10 100 1000
10 0.1 1 10 100 1000
Collector Current (mA)
Collector Current (mA)
On Voltage & Collector Current
10000 10
Capacitance & Reverse-Biased Voltage
Capacitance (pF)
On Voltage (mV)
Cob
1000
VBE(on) @ VCE=10V
100 1 10 100 1000
1 0.1 1 10 100
Collector Current (mA)
Reverse-Biased Voltage (V)
Cutoff Frequency & Collector Current
100 10000 PT=1ms VCE=20V PT=100ms 1000 PT=1s
Safe Operating Area
Collector Current-IC (mA)
10 1 10 100
Cutoff Frequency (MHz)
100
10
1 1 10 100 1000
Collector Current (mA)
Forward Voltage-VCE (V)
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6268-B Issued Date : 1993.10.05 Revised Date : 2000.09.25 Page No. : 3/4
PD-Ta
700 600
Power Dissipation-PD(mW)
500 400 300 200 100 0 0 20 40 60 80 100
o
120
140
160
Ambient Temperature-Ta( C)
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A B
12 3
Spec. No. : HE6268-B Issued Date : 1993.10.05 Revised Date : 2000.09.25 Page No. : 4/4
2
Marking :
HSMC Logo Part Number Date Code Rank Product Series
3
Laser Mark
HSMC Logo Product Series
C
D
Part Number
H I E F
G
Ink Mark Style : Pin 1.Emitter 2.Base 3.Collector
1
3-Lead TO-92 Plastic Package HSMC Package Code : A
*:Typical
DIM A B C D E F
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
DIM G H I 1 2 3
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2
Notes : 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
* Lead : 42 Alloy ; solder plating * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
* Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 * Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 * Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5977061 Fax : 886-3-5979220
HSMC Product Specification

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